ROHM Semiconductor
2SCR563F3TR
Bipolar Transistors - BJT Small and Excellent Thermal Conductivity, NPN 6A 50V Middle Power Transistor
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- DFN-2020-3S-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 350 mV
- Pd - Power Dissipation
- 2.1 W
- Gain Bandwidth Product fT
- 200 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 6 A
- Country of Origin
- JP
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 180 at 500 mA, 3 V
- DC Current Gain hFE Max
- 450 at 500 mA, 3 V
- Part # Aliases
- 2SCR563F3
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.