Central Semiconductor
2N2896 TIN/LEAD
Bipolar Transistors - BJT NPN 140Vcbo 90Vceo 7.0Vebo 15pF 120MHz
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N2896
- Package
- TO-18-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 90 V
- Collector- Base Voltage VCBO
- 140 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 600 mV
- Pd - Power Dissipation
- 1.8 W
- Gain Bandwidth Product fT
- 120 MHz
- Continuous Collector Current
- 1 A
- DC Collector/Base Gain hfe Min
- 60
- DC Current Gain hFE Max
- 200
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.