Taiwan Semiconductor
MMBT3904T RSG
Bipolar Transistors - BJT 60V, 0.2A, NPN Bipolar Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-523-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 200 mA
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 150 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 200 mA
Show more parameters (3)
- Country of Origin
- TW
- DC Collector/Base Gain hfe Min
- 30
- DC Current Gain hFE Max
- 300
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.