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ROHM Semiconductor

2SA1576U3T106S

Bipolar Transistors - BJT PNP -50V -0.15A 0.2W SOT-323; SC-70; UMT3

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - BJT
Package
SOT-323-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 50 V
Collector- Base Voltage VCBO
- 60 V
Emitter- Base Voltage VEBO
- 6 V
Collector-Emitter Saturation Voltage
- 500 mV
Maximum DC Collector Current
- 150 mA
Pd - Power Dissipation
200 mW
Gain Bandwidth Product fT
140 MHz
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
560
Technology
Si
Show more parameters (2)
Continuous Collector Current
- 150 mA
DC Collector/Base Gain hfe Min
120

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SA1576U3T106S Specifications and Datasheet | ChipSourceHub