Central Semiconductor
BC857C TR PBFREE
Bipolar Transistors - BJT PNP 50Vcbo 45Vceo 5.0Vebo 100mA 350mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BC857
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.65 V
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 800 at 2 mA, 5 V
- Continuous Collector Current
- 100 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 420 at 2 mA, 5 V
- Pd - Power Dissipation
- 350 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.