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onsemi

NTMFS3D0N08XT1G

MOSFETs T10 80V STD NCH MOSFET SO8FL

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
NTMFS3D0N08X
Package
SO-8
Mounting Style
SMD/SMT
Packaging
Cut Tape

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
80 V
Id - Continuous Drain Current
154 A
Rds On - Drain-Source Resistance
2.6 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
3.6 V
Qg - Gate Charge
28 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
133 W
Show more parameters (9)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
MY
Fall Time
6 ns
Forward Transconductance - Min
115 S
Rise Time
8 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
24 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NTMFS3D0N08XT1G Specifications and Datasheet | ChipSourceHub