ROHM Semiconductor
2SAR293PT100
Bipolar Transistors - BJT Trans GP BJT PNP 30V 1A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SxR
- Package
- MPT-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 30 V
- Collector- Base Voltage VCBO
- - 30 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 0.15 V
- Maximum DC Collector Current
- - 1 A
- Gain Bandwidth Product fT
- 320 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 680
- DC Collector/Base Gain hfe Min
- 270
- Pd - Power Dissipation
- 500 mW
Show more parameters (1)
- Part # Aliases
- 2SAR293P
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.