IXYS
IXTX1R4N450HV
MOSFET DISCMOSFET NCH STD-VERYHIVOLT
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 4500 V
- Id - Continuous Drain Current
- 1.4A
- Rds On - Drain-Source Resistance
- 40 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 20 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 960 W
- Configuration
- Single
- Product
- Power MOSFET Modules
- Type
- High Voltage
Show more parameters (4)
- Fall Time
- 170 ns
- Rise Time
- 60 ns
- Typical Turn-Off Delay Time
- 126 ns
- Typical Turn-On Delay Time
- 44 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.