ON Semiconductor
2SC3646S-TD-E
Bipolar Transistors - BJT BIP NPN 1A 100V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC3646
- Package
- PCP-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 0.1 V
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 120 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 280
- Continuous Collector Current
- 1 A
- DC Collector/Base Gain hfe Min
- 140
Show more parameters (2)
- Pd - Power Dissipation
- 1.3 W
- Unit Weight
- 0.001812 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.