ROHM Semiconductor
US6T9TR
Bipolar Transistors - BJT BIPOLAR PNP
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- US6T9
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- - 30 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 320 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 270 at 100 mA, 2 V
- Height
- 0.77 mm
- Length
- 2 mm
- Width
- 1.7 mm
Show more parameters (4)
- Continuous Collector Current
- - 1 A
- DC Collector/Base Gain hfe Min
- 270
- Pd - Power Dissipation
- 1000 mW
- Part # Aliases
- US6T9
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.