Infineon Technologies
AIMBG75R027M1HXTMA1
SiC MOSFETs AUTOMOTIVE_SICMOS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Series
- 750V G1
- Package
- TO-263-7
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
21 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 750 V
- Id - Continuous Drain Current
- 64 A
- Rds On - Drain-Source Resistance
- 25 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 5.6 V
- Qg - Gate Charge
- 49 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 273 W
- Channel Mode
- Enhancement
Show more parameters (9)
- Tradename
- CoolSiC
- Configuration
- Single
- Country of Origin
- AT
- Fall Time
- 9 ns
- Rise Time
- 12 ns
- Technology
- SiC
- Typical Turn-Off Delay Time
- 24 ns
- Typical Turn-On Delay Time
- 11 ns
- Part # Aliases
- AIMBG75R027M1H SP005596202
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.