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Nexperia

BCW68GVL

Bipolar Transistors - BJT BCW68G/SOT23/TO-236A

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
SOT-23-3
Mounting Style
SMD/SMT
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 45 V
Collector- Base Voltage VCBO
- 50 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 350 mV
Maximum DC Collector Current
- 800 mA
Pd - Power Dissipation
250 mW
Gain Bandwidth Product fT
80 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
400
Show more parameters (4)
Technology
Si
Continuous Collector Current
- 800 mA
DC Collector/Base Gain hfe Min
160
Qualification
AEC-Q101

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BCW68GVL Specifications and Datasheet | ChipSourceHub