Diodes Incorporated
IMX8-7-F
Bipolar Transistors - BJT DUAL NPN 225mW SIGNAL DUAL NPN
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- IMX8
- Package
- SOT-26-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 120 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 0.05 A
- Gain Bandwidth Product fT
- 140 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 1.1 mm
- Length
- 3 mm
- Width
- 1.6 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 180
- Pd - Power Dissipation
- 300 mW
- Unit Weight
- 0.001058 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.