Nexperia
PBSS9110T-QR
Bipolar Transistors - BJT SOT23 100V 1A PNP BJT
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 320 mV
- Pd - Power Dissipation
- 480 mW
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (6)
- Qualification
- AEC-Q101
- Continuous Collector Current
- 1 A
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 150 at - 500 mA, - 50 V
- DC Current Gain hFE Max
- 450 at - 500 mA, - 50 V
- Part # Aliases
- 934663814215
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.