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MACOM

MRF275L

RF MOSFET Transistors 5-500MHz 100Watts 28Volt Gain 8.8dB

Basic Information

View Datasheet ↗
Manufacturer
MACOM
Product Category
RF MOSFET Transistors
Package
333-04
Mounting Style
SMD/SMT
Packaging
Tray

Technical Specifications

14 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
13 A
Vds - Drain-Source Breakdown Voltage
65 V
Gain
8.8 dB
Output Power
100 W
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Configuration
Single
Operating Frequency
500 MHz
Type
RF Power MOSFET
Pd - Power Dissipation
270 W
Show more parameters (2)
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MRF275L Specifications and Datasheet | ChipSourceHub