Diodes Incorporated
DST847BPDP6-7
Bipolar Transistors - BJT BIPOLAR TRANS COMP
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- DST847
- Package
- SOT-963-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V, - 5 V
- Collector-Emitter Saturation Voltage
- 300 mV, - 500 mV
- Maximum DC Collector Current
- 100 mA
- Gain Bandwidth Product fT
- 175 MHz, 340 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 200 at 2 mA
- Pd - Power Dissipation
- 250 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.