onsemi
NJVMJD44H11T4G
Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- MJD44H11
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 8 A
- Collector- Emitter Voltage VCEO Max
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 20 W
- Gain Bandwidth Product fT
- 85 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q100
Show more parameters (6)
- Continuous Collector Current
- 8 A
- Country of Origin
- VN
- DC Collector/Base Gain hfe Min
- 60
- DC Current Gain hFE Max
- 60 at 2 A, 1 V
- Part # Aliases
- NJVMJD44H11T4G-VF01
- Unit Weight
- 0.012381 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.