Diodes Incorporated
2DB1188R-13
Bipolar Transistors - BJT 1000W -32Vceo
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- 2DB11
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 32 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 800 mV
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 120 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 390
- Height
- 1.5 mm
Show more parameters (5)
- Length
- 4.5 mm
- Width
- 2.48 mm
- DC Collector/Base Gain hfe Min
- 180
- Pd - Power Dissipation
- 1000 mW
- Unit Weight
- 0.001834 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.