Central Semiconductor
MPSA29 TRE
Bipolar Transistors - BJT NPN 100Vcbo 100Vces 12Vebo 500mA 625mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MPSA29
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 12 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Gain Bandwidth Product fT
- 125 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 500 mA
- DC Collector/Base Gain hfe Min
- 10000
- Pd - Power Dissipation
- 625 mW
Show more parameters (1)
- Part # Aliases
- MPSA29 PBFREE TRE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.