SemiQ
GCMX005A170S3B1-N
MOSFET Modules 1700V, 5mohm SiC MOSFET Module, S3 Half Bridge
Basic Information
View Datasheet ↗- Manufacturer
- SemiQ
- Product Category
- MOSFET Modules
- Series
- GCMX
- Package
- S3
- Mounting Style
- Screw Mount
- Packaging
- Bulk
Technical Specifications
21 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.7 kV
- Id - Continuous Drain Current
- 397 A
- Rds On - Drain-Source Resistance
- 7 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 2.113 kW
- Configuration
- Triple
- Country of Origin
- CN
Show more parameters (9)
- Fall Time
- 32 ns
- Height
- 26.3 mm
- Length
- 106.4 mm
- Product
- MOSFET Modules
- Rise Time
- 22 ns
- Typical Turn-Off Delay Time
- 143 ns
- Typical Turn-On Delay Time
- 118 ns
- Vf - Forward Voltage
- 4 V
- Width
- 61.4 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.