Toshiba
2SC5066-O,LF
RF Bipolar Transistors Radio-Frequency Bipolar Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- RF Bipolar Transistors
- Series
- 2SC5066
- Package
- SOT-416-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 80
- Collector- Emitter Voltage VCEO Max
- 12 V
- Emitter- Base Voltage VEBO
- 3 V
- Maximum Operating Temperature
- + 125 C
- Configuration
- Single
- Collector- Base Voltage VCBO
- 20 V
- DC Current Gain hFE Max
- 240 at 10 mA at 5 V
- Gain Bandwidth Product fT
- 7 GHz
- Maximum DC Collector Current
- 30 mA
- Pd - Power Dissipation
- 100 mW
Show more parameters (1)
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.