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onsemi

NTMFS6H800NLT1G

MOSFETs 80V 224A 1.8mOhm Single N-Channel

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
NTMFS6H800NL
Package
DFN-5
Mounting Style
SMD/SMT
Packaging
Cut Tape

Technical Specifications

24 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
80 V
Id - Continuous Drain Current
224 A
Rds On - Drain-Source Resistance
1.9 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qg - Gate Charge
112 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
214 W
Show more parameters (12)
Channel Mode
Enhancement
Configuration
Single
Country of Assembly
MY
Country of Diffusion
JP
Country of Origin
MY
Fall Time
163 ns
Forward Transconductance - Min
250 S
Rise Time
153 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
118 ns
Typical Turn-On Delay Time
20 ns
Unit Weight
0.006173 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NTMFS6H800NLT1G Specifications and Datasheet | ChipSourceHub