STMicroelectronics
STP13NM60ND
MOSFET N-CH 600V 0.32Ohm 11A FDMesh II
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STP13NM60ND
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 11 A
- Rds On - Drain-Source Resistance
- 380 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 25 V
- Qg - Gate Charge
- 24.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 109 W
Show more parameters (7)
- Configuration
- Single
- Transistor Type
- 1 N-Channel
- Fall Time
- 15.4 ns
- Rise Time
- 10 ns
- Typical Turn-Off Delay Time
- 9.6 ns
- Typical Turn-On Delay Time
- 46.5 ns
- Unit Weight
- 0.011640 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.