Microchip / Microsemi
JAN2N5794UC/TR
Bipolar Transistors - BJT Dual Small-Signal BJT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- Bipolar Transistors - BJT
- Mounting Style
- SMD/SMT
- RoHS
- Not compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 75 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 900 mV
- Pd - Power Dissipation
- 600 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 600 mA
- DC Current Gain hFE Max
- 300 at 150 mA, 10 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.