Taiwan Semiconductor
TSC5304EDCH C5G
Bipolar Transistors - BJT High voltage NPN Transistor with diode
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 400 V
- Collector- Base Voltage VCBO
- 700 V
- Emitter- Base Voltage VEBO
- 9 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 8 A
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 37
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 10
Show more parameters (2)
- Pd - Power Dissipation
- 35 W
- Unit Weight
- 0.011993 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.