Central Semiconductor
CBCP68 TR TIN/LEAD
Bipolar Transistors - BJT NPN 25Vces 20Vceo 5.0Vebo 1.0A 2.0W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- CBCP6
- Package
- SOT-223-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Not compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 20 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Gain Bandwidth Product fT
- 65 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 375 at 500 mA, 1 V
- Continuous Collector Current
- 1 A
- DC Collector/Base Gain hfe Min
- 85 at 500 mA, 1 V
Show more parameters (1)
- Pd - Power Dissipation
- 2 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.