Diodes Incorporated
FCX789ATA
Bipolar Transistors - BJT PNP High Gain
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- FCX789
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 25 V
- Collector- Base Voltage VCBO
- - 25 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 250 mV
- Maximum DC Collector Current
- 3 A
- Pd - Power Dissipation
- 2000 mW
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
Show more parameters (7)
- Height
- 1.5 mm
- Length
- 4.5 mm
- Technology
- Si
- Width
- 2.5 mm
- Continuous Collector Current
- - 3 A
- DC Collector/Base Gain hfe Min
- 300 at 10 mA, 2 V, 230 at 1 A, 2 V, 180 at 2 A, 2 V, 75 at 6 A, 2 V
- Unit Weight
- 0.001834 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.