onsemi
NSV40301MZ4T1G
Bipolar Transistors - BJT 3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor AEC-Q101
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS40301
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Pd - Power Dissipation
- 2 W
- Gain Bandwidth Product fT
- 215 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (5)
- Qualification
- AEC-Q100
- Country of Assembly
- MY
- Country of Diffusion
- MY
- Country of Origin
- MY
- Unit Weight
- 0.003880 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.