STMicroelectronics
RF2L42008CG2
RF MOSFET Transistors 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Package
- E2-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
14 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Rds On - Drain-Source Resistance
- 1.5 Ohms
- Operating Frequency
- 3.6 GHz
- Gain
- 14.5 dB
- Output Power
- 8 W
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- CN
- Moisture Sensitive
- Yes
- Number of Channels
- 1 Channel
- Type
- RF Power MOSFET
Show more parameters (2)
- Vgs - Gate-Source Voltage
- - 6 V to + 10 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.