ROHM Semiconductor
2SC5876T106R
Bipolar Transistors - BJT NPN 60V 0.5A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC5876
- Package
- UMT-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 150 mV
- Maximum DC Collector Current
- 0.5 A
- Gain Bandwidth Product fT
- 300 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 390
- Height
- 0.8 mm
- Length
- 2 mm
Show more parameters (5)
- Width
- 1.25 mm
- Continuous Collector Current
- 0.5 A
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 200 mW
- Unit Weight
- 0.000106 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.