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onsemi

NSM80101MT1G

Bipolar Transistors - BJT NPN TRANS & SWCH DIODE

Basic Information

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Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
NSM80101M
Package
SC-74-6
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

17 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Dual
Maximum DC Collector Current
500 mA
Collector- Emitter Voltage VCEO Max
80 V
Collector- Base Voltage VCBO
80 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
300 mV
Pd - Power Dissipation
400 mW
Gain Bandwidth Product fT
150 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (5)
Country of Assembly
CN
Country of Diffusion
MY
Country of Origin
CN
DC Collector/Base Gain hfe Min
120
Unit Weight
0.000474 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSM80101MT1G Specifications and Datasheet | ChipSourceHub