ON Semiconductor
NSB1706DMW5T1G
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- NSB1706DMW5
- Package
- SC-88A/SOT-353
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Configuration
- Dual Common Emitter
- Transistor Polarity
- NPN
- Typical Input Resistor
- 4.7 kOhms
- Typical Resistor Ratio
- 0.1
- DC Collector/Base Gain hfe Min
- 80, 200
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 0.1 A
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 187 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 80
Show more parameters (3)
- Height
- 1 mm
- Length
- 2.2 mm
- Width
- 1.35 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.