Central Semiconductor
2N5210
Bipolar Transistors - BJT NPN Gen Pur SS
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5210
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 4.5 V
- Collector-Emitter Saturation Voltage
- 700 mV
- Maximum DC Collector Current
- 50 mA
- Gain Bandwidth Product fT
- 30 MHz
- Maximum Operating Temperature
- + 150 C
- Height
- 5.33 mm
- Length
- 5.21 mm
- Width
- 4.19 mm
Show more parameters (5)
- Continuous Collector Current
- 0.1 A
- DC Collector/Base Gain hfe Min
- 200 at 100 uA, 5 V
- Pd - Power Dissipation
- 350 mW
- Part # Aliases
- 2N5210 PBFREE
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.