MACOM
CGHV50200F
GaN FETs GaN HEMT 4.4-5.0GHz, 200 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- 4402015
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 17 A
- Vgs th - Gate-Source Threshold Voltage
- - 3.4 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- US
- Development Kit
- CGHV50200F-AMP
- Gain
- 11.5 dB
- Maximum Operating Frequency
- 5 GHz
- Minimum Operating Frequency
- 4.4 GHz
- Output Power
- 180 W
Show more parameters (3)
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.