Central Semiconductor
2N5225 TIN/LEAD
Bipolar Transistors - BJT NPN 25Vcbo 25Vceo 4.0Vebo 100mA 20pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5225
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
9 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 25 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 800 mV
- Gain Bandwidth Product fT
- 50 MHz
- DC Collector/Base Gain hfe Min
- 30 at 10 V, 50 mA
- DC Current Gain hFE Max
- 600 at 10 V, 50 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.