Taiwan Semiconductor
KTC3198-Y A1G
Bipolar Transistors - BJT NPN Transistor Hfe 120-240
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.25 V
- Maximum DC Collector Current
- 0.15 A
- Gain Bandwidth Product fT
- 80 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 240
Show more parameters (4)
- Continuous Collector Current
- 0.15 A
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 500 mW
- Unit Weight
- 0.007654 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.