Wolfspeed / Cree
CGHV1J006D-GP4
RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- RF JFET Transistors
- Package
- Die
- Mounting Style
- SMD/SMT
- Packaging
- Gel Pack
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Type
- HEMT
- Technology
- GaN
- Gain
- 17 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
- Id - Continuous Drain Current
- 0.8 A
- Output Power
- 6 W
- Configuration
- Single
- Height
- 100 um
- Length
- 840 um
- Operating Frequency
- 10 MHz to 18 GHz
Show more parameters (4)
- Product
- GaN HEMT
- Width
- 800 um
- Rds On - Drain-Source Resistance
- 2.3 Ohms
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.