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Vishay / Siliconix

SISA72DN-T1-GE3

MOSFET 40V Vds 20V Vgs PowerPAK 1212-8

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Series
SIS
Package
PowerPAK-1212-8
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

21 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
60 A
Rds On - Drain-Source Resistance
3.5 mOhms
Vgs th - Gate-Source Threshold Voltage
1.1 V
Vgs - Gate-Source Voltage
10 V
Qg - Gate Charge
41.5 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
52 W
Show more parameters (9)
Configuration
Single
Channel Mode
Enhancement
Tradename
TrenchFET, PowerPAK
Transistor Type
1 N-Channel
Forward Transconductance - Min
70 S
Fall Time
7 ns
Rise Time
20 ns
Typical Turn-Off Delay Time
24 ns
Typical Turn-On Delay Time
10 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SISA72DN-T1-GE3 Specifications and Datasheet | ChipSourceHub