Nexperia
PBSS8510PA,115
Bipolar Transistors - BJT 100V 5.2A NPN LOW VCESAT TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- DFN-2020-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 6 A
- Gain Bandwidth Product fT
- 150 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 285
- Height
- 0.61 mm
- Length
- 2.1 mm
Show more parameters (4)
- Width
- 2.1 mm
- Continuous Collector Current
- 5.2 A
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 2.1 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.