ROHM Semiconductor
2SCR586JFRGTLL
Bipolar Transistors - BJT NPN 80V 5A 40W TO-263AB
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-263AB-3
- Mounting Style
- SMD/SMT
- Packaging
- 6 V
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Maximum DC Collector Current
- 10 A
- Gain Bandwidth Product fT
- 200 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 390
- Continuous Collector Current
- 5 A
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 40 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.