MACOM
MAPC-A3010-AB000
GaN FETs Transistor, DC-4GHz, 120W, G28V5
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- 440223
- Mounting Style
- SMD/SMT
Technical Specifications
14 parameters- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 84 V
- Id - Continuous Drain Current
- 12 A
- Vgs - Gate-Source Voltage
- - 10 V, + 2 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 65 C
- Configuration
- 1 Channel
- Country of Origin
- US
- Gain
- 18 dB
- Maximum Operating Frequency
- 4 GHz
- Minimum Operating Frequency
- 0 Hz
- Output Power
- 50.9 dBm
Show more parameters (2)
- Product
- GaN FETs
- Type
- GaN on SiC Transistor
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.