Infineon Technologies
IMZA120R017M2HXKSA1
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Package
- PG-TO247-4-U02
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
27 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 97 A
- Rds On - Drain-Source Resistance
- 23 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage
- 5.1 V
- Qg - Gate Charge
- 89 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 382 W
- Channel Mode
- Enhancement
Show more parameters (15)
- Tradename
- CoolSiC
- Configuration
- Single
- Country of Assembly
- CN
- Country of Diffusion
- AT
- Country of Origin
- AT
- Fall Time
- 9.1 ns
- Forward Transconductance - Min
- 27 S
- Product
- MOSFETs
- Rise Time
- 6.1 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Type
- Silicon Carbide MOSFET
- Typical Turn-Off Delay Time
- 21.2 ns
- Typical Turn-On Delay Time
- 10 ns
- Part # Aliases
- IMZA120R017M2H SP006133734
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.