Central Semiconductor
2N699 TIN/LEAD
Bipolar Transistors - BJT NPN 120Vcbo 80Vceo 7.0Vebo 150mA 15pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N699
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 1.3 V
- Pd - Power Dissipation
- 2 W
- Gain Bandwidth Product fT
- 60 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 175 C
- DC Collector/Base Gain hfe Min
- 40 at 150 mA, 10 V
Show more parameters (1)
- DC Current Gain hFE Max
- 120 at 150 mA, 10 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.