Microchip / Microsemi
APTGT100DA120T1G
IGBT Modules DOR CC8079
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- IGBT Modules
- Package
- SP1-12
- Mounting Style
- Chassis Mount
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Product
- IGBT Silicon Modules
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.7 V
- Continuous Collector Current at 25 C
- 140 A
- Gate-Emitter Leakage Current
- 400 nA
- Pd - Power Dissipation
- 480 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 100 C
- Technology
- Si
- Maximum Gate Emitter Voltage
- 20 V
- Unit Weight
- 2.821917 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.