Nexperia
PBSS5360XX
Bipolar Transistors - BJT Bipolar Discretes SOT89
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Series
- PBSS5360
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 60 V
- Collector- Base Voltage VCBO
- - 80 V
- Emitter- Base Voltage VEBO
- - 7 V
- Collector-Emitter Saturation Voltage
- - 550 mV
- Maximum DC Collector Current
- - 3 A
- Gain Bandwidth Product fT
- 130 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- - 3 A
- DC Collector/Base Gain hfe Min
- 80
Show more parameters (2)
- Pd - Power Dissipation
- 1.35 W
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.