ROHM Semiconductor
QS6M4TR
MOSFET N+P 30 20V 1.5A TSMT6
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Series
- QS6M4
- Package
- SOT-457T-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V, 20 V
- Id - Continuous Drain Current
- 1.5 A
- Rds On - Drain-Source Resistance
- 260 mOhms
- Vgs - Gate-Source Voltage
- 12 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.25 W
- Configuration
- Dual
- Channel Mode
- Enhancement
Show more parameters (12)
- Height
- 0.85 mm
- Length
- 2.9 mm
- Product
- MOSFET Small Signal
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Type
- MOSFET
- Width
- 1.6 mm
- Fall Time
- 18 ns, 12 ns
- Rise Time
- 18 ns, 12 ns
- Typical Turn-Off Delay Time
- 15 ns, 45 ns
- Typical Turn-On Delay Time
- 7 ns, 10 ns
- Part # Aliases
- QS6M4
- Unit Weight
- 0.000494 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.