ON Semiconductor
MMBT5551LT1G
Bipolar Transistors - BJT 600mA 160V NPN
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MMBT5551L
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 140 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 0.15 V
- Maximum DC Collector Current
- 0.6 A
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 250
- Height
- 0.94 mm
- Length
- 2.9 mm
Show more parameters (5)
- Width
- 1.3 mm
- Continuous Collector Current
- 0.6 A
- DC Collector/Base Gain hfe Min
- 80
- Pd - Power Dissipation
- 225 mW
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.