Nexperia
PBSS303NX-QX
Bipolar Transistors - BJT PBSS303NX-Q/SOT89/MPT3
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 10.2 A
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 160 mV
- Pd - Power Dissipation
- 2.1 W
- Gain Bandwidth Product fT
- 130 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (4)
- Continuous Collector Current
- 5.1 A
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 180 at 6 A, 2 V
- Part # Aliases
- 934667756115
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.