NXP Semiconductors
MRFE6VP61K25HR6
RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MRFE6VP61K25H
- Package
- NI-1230
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 10 uA
- Vds - Drain-Source Breakdown Voltage
- 133 V
- Gain
- 24 dB
- Output Power
- 1.25 kW
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 1.8 MHz, 600 MHz
- Type
- RF Power MOSFET
- Pd - Power Dissipation
- 1.333 kW
- Vgs - Gate-Source Voltage
- 10 V
Show more parameters (3)
- Vgs th - Gate-Source Threshold Voltage
- 2.2 V
- Part # Aliases
- 935314411128
- Unit Weight
- 0.464036 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.