ON Semiconductor / Fairchild
FSB660A
Bipolar Transistors - BJT PNP Transistor Low Saturation
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- FSB660A
- Package
- SuperSOT-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 75 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 550
- Height
- 0.94 mm
Show more parameters (7)
- Length
- 2.92 mm
- Width
- 1.4 mm
- Continuous Collector Current
- 2 A
- DC Collector/Base Gain hfe Min
- 250
- Pd - Power Dissipation
- 500 mW
- Part # Aliases
- FSB660A_NL
- Unit Weight
- 0.001058 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.